Semiconductor device

ABSTRACT

A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2016-0025167, filed on Mar. 2, 2016,and entitled, “Semiconductor Device,” is incorporated by referenceherein in its entirety.

BACKGROUND

1. Field

One or more embodiments described herein relate to a semiconductordevice.

2. Description of the Related Art

A multi-bridge channel field effect transistor (MBCFET) may be formed bylaminating nanosheets on a substrate and then patterning the nanosheetsto form channels. Source/drain layers are formed at opposite sides ofthe channels and are doped with dopants. The dopants may be doped atopposite end portions of the channels. A doping profile of the dopantsin each of the channels may have a non-vertical side profile relative toa top surface of the substrate. Thus, an effective gate length in a topchannel is less than an effective gate length in a bottom channel.

SUMMARY

In accordance with one or more embodiments, a semiconductor deviceincludes a plurality of channels sequentially stacked on a substrate,the plurality of channels spaced apart from each other in a firstdirection perpendicular to a top surface of the substrate; source/drainlayers at opposite sides of the plurality of channels in a seconddirection parallel to the top surface of the substrate, the source/drainlayers connected to the plurality of channels; and a gate structureenclosing the plurality of channels, wherein the plurality of channelshave different lengths in the second direction and different thicknessesin the first direction.

In accordance with one or more other embodiments, a semiconductor deviceincludes a pair of first semiconductor patterns on a substrate, the pairof first semiconductor patterns spaced apart from each other in a firstdirection parallel to a top surface of the substrate; a secondsemiconductor patterns between the pair of first semiconductor patternsand connected to the pair of first semiconductor patterns, the secondsemiconductor patterns spaced apart from each other in a seconddirection perpendicular to the top surface of the substrate; and a gatestructure between the pair of first semiconductor and covering thesecond semiconductor patterns, wherein each of the second semiconductorpatterns includes a central portion between end portions in the firstdirection, the end portions of the second semiconductor patternsincluding a same impurity as the pair of first semiconductor patterns,and the central portions of the second semiconductor patterns havingdifferent lengths and different thicknesses from each other.

In accordance with one or more other embodiments, a semiconductor deviceincludes a gate structure on a substrate; epitaxial layers at oppositesides of the gate structure in a first direction parallel to a topsurface of the substrate; a plurality of semiconductor patternsextending from the epitaxial layers in the first direction to passthrough the gate structure, the plurality of semiconductor patternsspaced apart from each other in a second direction perpendicular to thetop surface of the substrate; source/drain layers in respective ones ofthe epitaxial layers and including extension portions extending from theepitaxial layers to respective end portions of the plurality ofsemiconductor patterns; and a plurality of channels in the plurality ofsemiconductor patterns, the plurality of channels between the respectiveend portions of the plurality of semiconductor patterns and spaced apartfrom each other in the second direction, wherein the plurality ofchannels have different lengths in the first direction from each otherand different thickness in the second direction from each other.

In accordance with one or more other embodiments, a semiconductor deviceincludes a plurality of patterns stacked on a substrate and a pluralityof gate electrodes on respective ones of the patterns, wherein thepatterns include channels and wherein lengths of the channels or gateelectrodes progressively change to offset a progressive change inthicknesses of the channels or gate electrodes in a predetermineddirection.

In accordance with one or more other embodiments, a method formanufacturing a semiconductor device includes forming a plurality ofchannels sequentially stacked on a substrate, the plurality of channelsspaced apart from each other in a first direction perpendicular to a topsurface of the substrate; forming source/drain layers at opposite sidesof the plurality of channels in a second direction parallel to the topsurface of the substrate, the source/drain layers connected to theplurality of channels; and forming a gate structure enclosing theplurality of channels, wherein the plurality of channels have differentlengths in the second direction and different thicknesses in the firstdirection.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIGS. 1 through 4 illustrate an embodiment of a semiconductor device;

FIGS. 5 through 27 illustrate various stages of an embodiment of amethod for fabricating a semiconductor device;

FIG. 28 illustrates another embodiment of a semiconductor device;

FIGS. 29 and 30 illustrate various stages of another embodiment of amethod for fabricating a semiconductor device;

FIG. 31 illustrates another embodiment of a semiconductor device;

FIGS. 32 and 33 illustrate various stages of another embodiment of amethod for fabricating a semiconductor device;

FIG. 34 illustrates another embodiment of a semiconductor device; and

FIG. 35 illustrates another embodiment of a semiconductor device.

DETAILED DESCRIPTION

FIGS. 1 through 4 illustrate an embodiment of a semiconductor device. Inparticular, FIG. 1 illustrates a plan view of the semiconductor device.FIG. 2 illustrates a cross-sectional view taken along line A-A′ inFIG. 1. FIG. 3 illustrates a cross-sectional view taken along line B-B′in FIG. 1. FIG. 4 illustrates a cross-sectional view taken along lineC-C′ in FIG. 1.

Referring to FIGS. 1 through 4, the semiconductor device may includefirst through third semiconductor patterns 127, 128, and 129, a fourthsemiconductor layer 190, and a gate structure 250 which are formed on asubstrate 100. In addition, the semiconductor device may include a gatespacer 160, an inner spacer 180, an insulating layer 200 (refer, e.g.,to FIG. 24), a capping layer 260, an interlayer insulating layer 270, ametal silicide pattern 290, and a contact plug 320.

The substrate 100 may include a semiconductor material such as silicon,germanium or silicon-germanium or a III-V group compound semiconductorsuch as GaAs, AlGaAs, InAs, InGaAs, InSb, GaSb, InGaSb, InP, GaP, InGaP,InN, GaN or InGaN. In some embodiments, the substrate 100 may be asilicon-on-insulator (SOI) substrate or a germanium-on-insulator (GOI)substrate.

The first through third semiconductor patterns 127, 128, and 129 may besequentially stacked on the substrate 100 in a third directionsubstantially perpendicular to a top surface of the substrate 100 andspaced apart from each other. Further, a plurality of each of the firstthrough semiconductor patterns 127, 128, and 129 may be formed alongfirst and second directions, which are parallel to the top surface ofthe substrate 100 and are orthogonal to each other. In some embodiments,each of the first through third semiconductor patterns 127, 128, and 129may include a nanosheet. In other embodiments, each of the first throughthird semiconductor patterns 127, 128, and 129 may include a nanowire.

Each of the first through semiconductor patterns 127, 128, and 129 mayinclude a central portion between opposite end portions and positionedin the first direction. For example, the first semiconductor pattern 127may include a first central portion 127 a and first end portions 127 b.The second semiconductor pattern 128 may include a second centralportion 128 a and second end portions 128 b. The third semiconductorpattern 129 may include a third central portion 129 a and third endportions 129 b.

The first through third end portions 127 b, 128 b, and 129 b of thefirst through third semiconductor patterns 127, 128, and 129 may bedoped with n-type impurities or p-type impurities. The first throughthird central portions 127 a, 128 a, and 129 a of the first throughthird semiconductor patterns 127, 128, and 129 may not be doped or maybe doped with impurities of conductivity type opposite to those in thefirst through third end portions 127 b, 128 b, and 129 b. Therefore, thefirst through third end portions 127 b, 128 b, and 129 b may bedistinguished from the first through third central portions 127 a, 128a, and 129 a.

The first through third end portions 127 b, 128 b, and 129 b of thefirst through third semiconductor patterns 127, 128, and 129 may havelengths in the first direction that gradually decrease in a downwarddirection (e.g., in a direction from an upper level position toward alower level position). Thus, the first through third central portions127 a, 128 a, and 129 a may have lengths in the first direction thatgradually increase in the downward direction. For example, the third endportions 129 b at the upper level position may have a length greaterthan a length of the second end portions 128 b at an intermediate levelposition, in the first direction. The second end portions 128 b at theintermediate level position may have a length greater than a length ofthe first end portions 127 b at the lower level position, in the firstdirection.

In one embodiment, the third central portion 129 a at the upper levelposition may have a length less than a length of the second centralportion 128 a at the intermediate level position, in the firstdirection. The second central portion 128 a at the intermediate levelposition may have a length less than a length of a first central portion127 a at the lower level position, in the first direction.

Such a structure may result when the impurities are doped. A regiondoped with the impurities may be formed to be relatively wider in anupper portion than in the lower portion, because the doping profile isnot vertical to the top surface of the substrate 100 along the thirddirection but is to be inclined relative thereto along the thirddirection. An example will be described with reference to FIG. 18.

In some example embodiments, the first through third end portions 127 b,128 b, and 129 b of the first through third semiconductor patterns 127,128, and 129 may serve as a source/drain layer of a transistor togetherwith the fourth semiconductor layer 190. For example, the first throughthird end portions 127 b, 128 b, and 129 b of the first through thirdsemiconductor patterns 127, 128, and 129 may be extension portions ofthe source/drain layer which extend from the fourth semiconductor layer190 in the first direction. The first through third central portions 127a, 128 a, and 129 a of the first through third semiconductor patterns127, 128, and 129 may respectively serve as a channel of the transistor.In other words, the transistor may include a plurality of channels ormultiple channels that are sequentially stacked on the substrate 100.

In accordance with characteristics of the doping profile, the firstthrough third central portions 127 a, 128 a, and 129 a may have lengthsin the first direction (e.g., effective channel lengths or effectivegate lengths) that gradually increase in the downward direction. Thus,the first through third central portions 127 a, 128 a, and 129 a of thefirst through third semiconductor patterns 270, 280, and 290 mayrespectively have first through third effective gate lengths Le1, Le2,and Le3. The first through third effective gate lengths Le1, Le2, andLe3 may have a greater value in this order. In other words, the firstsemiconductor pattern 270 may have the first effective gate length Le1greater than the second effective gate length Le2 of the secondsemiconductor patterns 280. Also, the second semiconductor pattern 280may have the second effective gate length Le2 greater than the thirdeffective gate length Le3 of the third semiconductor patterns 290.

The first through third semiconductor patterns 270, 280, and 290 mayhave first through third thicknesses T1, T2, and T3, respectively, inthe third direction. The first through third thicknesses T1, T2, and T3may change in this order. For example, the first thickness T1 of thefirst semiconductor pattern 270 may be greater than the second thicknessT2 of the second semiconductor patterns 280. Also, the thickness T2 ofthe second semiconductor pattern 280 may be greater than the thirdthickness T3 of the third semiconductor patterns 290.

For example, the thicknesses T1, T2 and T3 of the first through thirdsemiconductor patterns 270, 280, and 290 (or thicknesses T1, T2, and T3of the channels of the first and third semiconductor patterns 270, 280,and 290) may be in a proportional relationship (e.g. a directproportional relationship) to the effective channel lengths (or theeffective gate lengths Le1, Le2, and Le3) of the first and through thirdsemiconductor patterns 270, 280, and 290.

Accordingly, even if the channels in the first through thirdsemiconductor patterns 270, 280, and 290 have effective channel lengths(or effective gate lengths) that increase in the downward direction (asthe first through third semiconductor patterns 270, 280, and 290 havethicknesses that increase in the downward direction), a reduction in thecurrent flowing through the channels may be prevented. The reduction incurrent due to the incremental effective channel lengths (or effectivegate lengths) may be offset by the incremental thickness of the channel.Therefore, deviation in current flow among the first through thirdsemiconductor patterns 127, 128, and 129 may be reduced.

The fourth semiconductor layer 190 may be at opposite sides of the firstthrough third semiconductor patterns 127, 128, and 129 and may beconnected to the first through third semiconductor patterns 127, 128,and 129. For example, a pair of the fourth semiconductor layers 190 mayhave the first through third semiconductor patterns 127, 128, and 129therebetween and may be connected to the first through thirdsemiconductor patterns 127, 128, and 129. In some embodiments, thefourth semiconductor layer 190 may extend in the second direction and anupper portion of the fourth semiconductor layer 190 may contact asidewall of the gate spacer 160.

The fourth semiconductor layer 190 may include a single crystal siliconcarbide or a single crystal silicon doped with n-type impurities. Thus,the fourth semiconductor layer 190 may form a source/drain layer of anNMOS transistor together with the first through third end portions 127b, 128 b, and 129 b of the first through third semiconductor patterns127, 128, and 129, which are doped with the n-type impurities.

In one embodiment, the fourth semiconductor layer 190 may include asingle crystal silicon-germanium doped with p-type impurities. Thus, thefourth semiconductor layer 190 may form a source/drain layer of a PMOStransistor together with the first through third end portions 127 b, 128b, and 129 b of the first through third semiconductor patterns 127, 128,and 129, which are doped with the p-type impurities.

In an example, when the fourth semiconductor layer 190 includes a singlecrystal silicon doped with the n-type impurities, the fourthsemiconductor layer 190 may contact the first through third end portions127 b, 128 b, and 129 b of the first through third semiconductorpatterns 127, 128, and 129, which also are doped with the n-typeimpurities and may be integral with the first through third end portions127 b, 128 b, and 129 b.

In some embodiments, the fourth semiconductor layer 190 may be anepitaxial layer formed by a selective epitaxial growth (SEG) process, alaser-induced epitaxial growth (LEG) process, or a solid phase epitaxialgrowth (SPE) process.

The gate structure 250 may enclose the first through third semiconductorpatterns 127, 128, and 129. In some embodiments, the gate structure 250may extend in the second direction and may be formed to include aplurality of gate structures apart from each other in the firstdirection.

The gate spacer 160 may be formed on opposite sidewalls (e.g., oppositesidewalls disposed in the first direction) of an upper portion of thegate structure 250. The inner spacer 180 may be formed between thefourth layer 190 and a lower portion of the gate structure 250. In someembodiments, the gate spacer 160 may extend in the second direction. Inone embodiment, a plurality of inner spacers 180 may be formed along thefirst and second directions.

The gate structure 250 may include an interface pattern 220, a gateinsulating pattern 230, and a gate electrode 240. The interface pattern220 may be formed on surfaces of the first through third semiconductorpatterns 127, 128, and 129 and on the top surface of the substrate 100.The gate insulating pattern 230 may be formed on a surface of theinterface pattern 220 and on inner sidewalls of the inner spacer 180 andthe gate spacer 160. The gate electrode 240 may extend in the seconddirection. In some embodiments, a work function control pattern mayfurther be formed between the gate insulating pattern 230 and the gateelectrode 240.

The interface pattern 220 may include, for example, an oxide such assilicon oxide. The gate insulating pattern 230 may include, for example,metal oxide having a high dielectric constant such as hafnium oxide(HfO₂), tantalum oxide (Ta₂O₅) or zirconium oxide (ZrO₂). The gateelectrode 240 may include, for example, metal such as aluminum (Al),copper (Cu) or tantalum (Ta), and/or nitride thereof. The work functioncontrol pattern may include, for example, metal nitride or metal alloysuch as titanium nitride (TiN), titanium aluminum (TiAl), titaniumaluminum nitride (TiAlN), tantalum nitride (TaN) or tantalum aluminumnitride (TaAlN).

The gate structure 250 may constitute an NMOS transistor or a PMOStransistor together with the source/drain layers.

The insulating layer 200 (refer, e.g., to FIG. 24) may be formed tocover a portion of an upper sidewall of the gate structure 250 and aportion of the fourth semiconductor layer 190. The insulating layer 200may include, for example, silicon oxide such as tonen silazene (TOSZ).

The metal silicide pattern 290 may be formed on a top surface of thefourth semiconductor pattern 190 and may include, for example, titaniumsilicide, cobalt silicide or nickel silicide.

The capping layer 260 may be formed on the gate structure 250 and thegate spacer 160 and may include, for example, a nitride such as siliconnitride. The interlayer insulating layer 270 may be formed on thecapping layer 260 and may include, for example, silicon oxide such astetra ethyl ortho silicate (TEOS).

The contact plug 320 may penetrate the interlayer insulating layer 270,the capping layer, and the insulating layer 200 to contact a top surfaceof the metal silicide pattern 290. In some embodiments, the contact plug320 may include a metal pattern 310 and a barrier pattern 300, whichcovers a bottom surface and a side surface of the metal pattern 310. Themetal pattern 310 may include, for example, a metal such as tungsten orcopper. The barrier pattern 300 may include, for example, metal nitridesuch as tantalum nitride, titanium nitride, or tungsten nitride. In someembodiments, the contact plug 320 may be self-aligned with the gatespacer 160, but this is not necessary.

The semiconductor device may further include an interconnection line anda contact via which are electrically connected to the contact plug 320.

The semiconductor device as describe above may be a multi-bridge channelfield effect transistor (MBCFET) that includes a plurality of channelssequentially stacked on the substrate 100 in the third direction.Although the channels in the first through third semiconductor patterns127, 128, and 129 may have effective channel lengths (or effective gatelengths) that increase in the downward direction in some embodiments,since the first through third semiconductor patterns 127, 128, and 129have thicknesses that increase in the downward direction, it is possibleto prevent current reduction in the channels. The current reductioncaused by the incremental effective channel lengths (or effective gatelengths) may be offset by the incremental thicknesses of the channel, tothereby reduce deviation in current flowing between the channels in thefirst through third semiconductor patterns 127, 128, and 129. Because atleast one of the channels has a relatively greater thickness, carriermobility therein may be improved.

The semiconductor device may include three semiconductor patterns of thefirst through semiconductor patterns 127, 128, and 129 as describeabove. In other embodiments, the semiconductor device may include twosemiconductor patterns or four or more semiconductor patterns to formchannels

FIGS. 5 to 27 illustrate various stages of an embodiment of a method forfabricating a semiconductor device. FIG. 5 illustrates a perspectiveview. FIGS. 6, 8, 11, 13, 16, 19, 21, 23 and 26 are plan views. FIGS. 7,9-10, 12, 14-15, 17-18, 20, 22, 24-25 illustrate cross-sectional views.In particular, FIG. 7 illustrates a cross-sectional view taken alongline A-A′ of a corresponding plan view. FIGS. 9, 12, 14-15, 17-18, 20,22, 24 and 27 illustrate views taken along line B-B′ of correspondingplan views. FIG. 25 illustrates a cross-sectional view along line C-C′of a corresponding plan view.

Referring to FIG. 5, sacrificial layers 110 and semiconductor layers121, 122, and 123 may be alternately and repeatedly stacked on asubstrate 100. The sacrificial layers 110 and the semiconductor layers121, 122 and 123 are shown as being respectively formed of three layers.In other embodiments, the sacrificial layers 110 and the semiconductorlayers 121, 122, and 123 may be respectively formed of another number oflayers. The semiconductor layers 121, 122, and 123 are referred to as afirst semiconductor layer 121, a second semiconductor layer 122, and athird semiconductor layer 123, which are sequentially from a top surfaceof the substrate 100 along a third direction perpendicular to the topsurface of the substrate 100.

The substrate 100 may include a semiconductor material such silicon,germanium or silicon-germanium or a III-V group compound semiconductorsuch as GaAs, AlGaAs, InAs, InGaAs, InSb, GaSb, InGaSb, InP, GaP, InGaP,InN, GaN or InGaN. In some embodiments, the substrate 100 may be asilicon-on-insulator (SOI) substrate or a germanium-on-insulator (GOI)substrate.

The sacrificial layer 110 may include a material having an etchingselectivity with respect to the substrate 100 and the first throughsemiconductor layers 121, 122, and 123. In some embodiments, thesacrificial layer 110 may include silicon-germanium.

The first through third semiconductor layers 121, 122, and 123 include asemiconductor material such as silicon or germanium. In someembodiments, the first through third semiconductor layers 121, 122, and123 may be formed to have first through third thicknesses T1, T2, and T3in the third direction, respectively. The first through thirdthicknesses T1, T2, and T3 may change in this order. For example, thefirst thickness T1 may be greater than the second thickness T2, and thesecond thickness T2 may be greater than the third thickness T3.

Referring to FIGS. 6 and 7, first etching masks may be formed on thethird semiconductor layer 123 at an uppermost level position and mayextend in a first direction parallel to the top surface of the substrate100. Then, the first through third semiconductor patterns 121, 122 and123 may be etched using the first etching masks. Accordingly,sacrificial lines 112 and first through third semiconductor lines 124,125, and 126 may be formed on the substrate 100 extending in the firstdirection.

In some embodiments, the sacrificial lines 112 and the first throughthird semiconductor lines 124, 125, and 126 may be respectively formedto include a plurality of lines spaced apart from each other in a seconddirection, parallel to the top surface of the substrate 100 andperpendicular to the first direction. The sacrificial lines 112 and thefirst through third semiconductor lines 124, 125, and 126, which arestacked on the substrate 100 and extend in the first direction, may bereferred to as a first structure S1.

Referring to FIGS. 8 through 10, a dummy gate structure DG may be formedon the first structure S1 and the substrate 100 and may extend in thesecond direction. For example, a dummy gate insulating layer, a dummygate electrode layer, and a dummy gate mask layer may be sequentiallyformed on the substrate 100 on which the first structures S1 are formed.After a photoresist pattern is formed on the dummy gate mask layer, thedummy gate mask layer may be etched using the photoresist pattern as anetching mask to form a dummy gate mask 150. The dummy gate electrodelayer and the dummy gate insulating layer may be etched using the dummygate mask 150 as an etching mask to form a dummy gate electrode 140 anda dummy gate insulating pattern 130. Thus, the dummy gate insulatingpattern 130, the dummy gate electrode 140 and the dummy gate mask 150that are sequentially stacked may constitute the dummy gate structureDG.

In some embodiments, the dummy gate structure DG may be formed toinclude a plurality of dummy gate structures spaced apart from eachother in the first direction and extending in the second direction.

The dummy gate insulating layer may be formed, for example, of an oxidesuch as silicon oxide. The dummy gate electrode layer may be formed, forexample, of poly-silicon. The dummy gate mask layer may be formed, forexample, of a nitride such as silicon nitride. The dummy gate insulatinglayer may be formed, for example, by a chemical vapor deposition (CVD)process or an atomic layer deposition (ALD) process. In anotherembodiment, the dummy gate insulating layer may be formed by a thermaloxidation process. The dummy gate electrode layer and the dummy gatemask layer may be formed, for example, by a chemical vapor deposition(CVD) process or an atomic layer deposition (ALD) process.

Referring to FIGS. 11 and 12, a gate spacer 160 may be formed on asidewall of the dummy gate structure DG. For example, after a gatespacer layer is formed on the substrate 100 on which the first structureS1 and the dummy gate structure DG are formed, the gate spacer layer maybe anisotropically etched to form the gate spacer 160 on oppositesidewalls of the dummy gate structure DG in the first direction. Thegate spacer layer may be formed, for example, of a nitride such assilicon nitride.

Referring to FIGS. 13 and 14, the first structure S1 under the dummygate structure DG and the gate spacer 160 may be etched, using the dummygate structure DG and the gate spacer 160 as an etching mask, to form asecond structure S2 between the substrate 100 and the dummy gatestructure DG.

The second structure S2 may include sacrificial patterns 114 andsemiconductor patterns 127, 128, and 129, which are alternately stackedon the substrate 100. A plurality of second structures S2 may be formedto be spaced apart from each other in the first and second directions.For example, the single first structure S1 that extends in the firstdirection may be patterned to form the plurality of the secondstructures S2 spaced apart from each other in the first direction.Furthermore, as the first structure S1 is formed in the plurality offirst structures in the second direction, the second structure S2 may beformed in the plurality of second structures that are spaced apart fromeach other in the second direction.

The semiconductor patterns 127, 128, and 129 may be referred to as afirst semiconductor pattern 127, a second semiconductor pattern 128, anda third semiconductor pattern 129 sequentially from the top surface ofthe substrate 100 in the third direction. In some embodiments, each ofthe first through third semiconductor patterns 127, 128, and 129 may bea nanosheet. In other embodiments, each of the first through thirdsemiconductor patterns 127, 128 and 129 may be a nanowire.

The dummy gate structure DG extending in the second direction, the gatespacer 160 formed on the opposite sidewalls of the dummy gate structureDG, and the second structure S2 may be referred to as a third structureS3. In some embodiments, the third structure S3 may extend in the seconddirection and may be formed to include a plurality of third structuresspaced apart from each other in the first direction. A first opening 170may be formed between the plurality of third structure S3 that arespaced apart from each other in the first direction

Referring to FIG. 15, opposite sidewalls (e.g., sidewalls in the firstdirection) of each of the sacrificial patterns 114 adjacent to the firstopening 170 may be etched to form recesses. Then, an inner spacer 180may be formed to fill the recesses. In some embodiments, the recessesmay be formed by performing a wet etching process on the sacrificialpatterns 114. The inner spacer 180 may be formed, for example, by adeposition process such as a CVD process or an ALD process and may beformed of an oxide such as silicon oxide.

The inner spacer 180 may be formed to have a thickness in the firstdirection substantially equal to a thickness of the gate spacer 160 inthe first direction. In other embodiments, the inner spacer 180 may beformed to have a thickness in the first direction greater or less than athickness of the gate spacer 160 in the first direction.

Referring to FIGS. 16 and 17, a fourth semiconductor layer 190 may beformed on the top surface of the substrate 100 exposed by the firstopening 170. In some embodiments, the fourth semiconductor layer 190 maybe formed by performing a selective epitaxial growth (SEG) process usingthe exposed top surface of the substrate 100 as a seed.

For example, the SEG process may be performed using a silicon source gassuch as disilane (Si₂H₆) and a carbon source gas such as SiH₃CH₃, tothereby form a single crystal silicon carbide (SiC) layer. In oneembodiment, the SEG process may be performed using only the siliconsource gas such as disilane (Si₂H₆), to thereby form a single crystalsilicon layer. In addition, a doping process using an n-type impuritysource gas, for example, phosphine (PH3), may be performed in-situ toform the single crystal silicon carbide layer or single crystal siliconlayer doped with n-type impurities.

In some embodiments, the SEG process may be performed, using a siliconsource gas such as dichlorosilane (SiH₂Cl₂) and a germanium source gassuch as germane (GeH₄), to form a single crystal silicon germanium(SiGe) layer. In addition, a doping process using a p-type impuritysource gas, for example, diborane (B₂H₆), may be performed in-situ toform the single crystal silicon germanium (SiGe) layer doped with thep-type impurities.

In some embodiments, the fourth semiconductor layer 190 may be formed atopposite sides of the third structure S3 in the first direction (e.g., apair of the fourth semiconductor layers 190 may be formed to have thethird structure S3 therebetween) and may extend in the second direction.The fourth semiconductor layer 190 may contact sidewalls of the secondstructure S2 and may further extend in the third direction to contactsidewalls of the gate spacer 160 on the second structure S2.

When the fourth semiconductor layer 190 includes the single crystalsilicon, the fourth semiconductor layer 190 may contact sidewalls of thefirst through third semiconductor patterns 127, 128, and 129 includingsilicon, such that the fourth semiconductor layer 190 is integral withthe first through third semiconductor patterns 127, 128, and 129. Thefourth semiconductor layer 190 may include, for example, an epitaxiallayer formed by the SEG process described above. The epitaxial layer maybe formed, for example, by an LEG process or SPE process.

Referring to FIG. 18, the fourth semiconductor layer 190 may be dopedwith impurities and may be annealed, to thereby form a source/drainlayer. When the fourth semiconductor layer 190 is formed, for example,of silicon carbide or silicon, n-type impurities may be doped into thefourth semiconductor layer 190 and annealed to form a source/drain layerof the NMOS transistor. When the fourth semiconductor layer 190 isformed, for example, of silicon germanium, p-type impurities may bedoped into the fourth semiconductor layer 190 and annealed to form asource/drain layer of the PMOS transistor.

When the impurities are doped in the fourth semiconductor layer 190, theimpurities may also be doped in opposite end portions of the firstthrough third semiconductor patterns 127, 128, and 129 in the firstdirection (e.g., first through third end portions 127 b, 128 b, and 129b of the first through third semiconductor patterns 127, 128, and 129)and portions of the sacrificial patterns 114 besides the fourthsemiconductor layer 190. The source/drain layer may therefore be formedto include the fourth semiconductor layer 190 and the first throughthird end portions 127 b, 128 b, and 129 b of the first through thirdsemiconductor patterns 127, 128, and 129.

In some embodiments, the first through third end portions 127 b, 128 b,and 129 b may have lengths in the first direction which graduallydecrease in a downward direction (e.g., a direction from an upper levelposition toward a lower level position). For example, the first endportions 127 b may have a length in the first direction greater than alength of the second end portions 128 b in the first direction. Also,the second end portions 128 b may have the length in the first directiongreater than a length of the third end portions 129 b in the firstdirection.

Thus, according to characteristics of the doping process, an impuritydoped region may include a larger upper portion than a lower portionthereof. As a result, an impurity doping profile may not be vertical tothe top surface of the substrate 100 along the third direction, butrather may be inclined relative to the top surface of the substrate 100along the third direction.

First through third central portions 127 a, 128 a and 129 a of the firstthrough third semiconductor patterns 127, 128, and 129 may respectivelyact as a channel of the transistor. In other words, the transistor mayinclude a plurality of channels or multiple channels sequentiallystacked on the substrate 100. In some embodiments, according to thecharacteristics of the doping process as described above, first throughthird central portions 127 a, 128 a, and 129 a may have lengths in thefirst direction (e.g., effective channel lengths or effective gatelengths) which gradually increase in the downward direction.Accordingly, the first through third central portions 127 a, 128 a, and129 a of the first through third semiconductor patterns 127, 128, and129 may respectively have first through third effective gate lengthsLe1, Le2, and Le3. The first through third central portions 127 a, 128a, and 129 a may have values in a predetermined order, e.g.,Le1>Le2>Le3.

The first through third semiconductor patterns 127, 128, and 129 mayhave thicknesses in the third direction which gradually increase in thedownward direction Thus, the same or similar amount of current may flowthrough the respective channels in the first through third semiconductorpatterns 127, 128, and 129. For example, because the channels formed inthe first through third patterns 127, 128, and 129 have effectivechannel lengths (or effective gate lengths) that increase in thedownward direction, current flowing through the channels may be reduced.However, since the first through third semiconductor patterns 127, 128,and 129 have thicknesses that increase in the downward direction,current reduction may be offset.

Referring to FIGS. 19 and 20, after forming an insulating layer 200thick enough to cover the third structure S3 and the fourthsemiconductor layer 190, the insulating layer 200 may be planarized toexpose top surfaces of the dummy gate electrodes 140 in the thirdstructure S3. At this time, the dummy gate mask 150 may be removedtogether and upper portions of the gate spacers 160 may be partiallyremoved. The insulating layer 200 may be formed, for example, of siliconoxide such as tonen silazene (TOSZ). The planarization process may beperformed, for example, by a chemical mechanical polishing (CMP) processand/or an etch-back process.

Referring to FIGS. 21 and 22, the exposed dummy gate electrode 140, thedummy gate insulating pattern 130, and the sacrificial patterns 114 maybe removed such that second through fifth openings 210, 212, 214, and216 are formed to expose inner sidewalls of the gate spacer 160, innersidewalls of the inner spacer 180, surfaces of the first through thirdsemiconductor patterns 127, 128, and 129, and top surface of thesubstrate 100. In some embodiments, the second through fifth openings210, 212, 214, and 216 may be formed to extend in the second direction.

An opening that exposes the inner sidewalls of the gate spacer 160 and atop surface of the third semiconductor pattern 129 may be defined as thesecond opening 210. An opening that exposes the inner sidewalls of theinner spacer 180, the top surface of the substrate 100, and a bottomsurface of the first semiconductor pattern 127 may be defined as thethird opening 212. An opening that exposes the inner sidewalls of theinner spacer 180, a top surface of the first semiconductor pattern 127,and a bottom surface of the second semiconductor pattern 128 may bedefined as the fourth opening 214. An opening that exposes the innersidewalls of the inner spacer 180, a top surface of the secondsemiconductor pattern 128 and a bottom surface of the thirdsemiconductor pattern 129 may be defined as the fifth opening.

Referring to FIGS. 23 through 25, a gate structure 250 may be formed onthe substrate 100 and may fill the second through fifth openings 210,212, 214, and 216. Specifically, after a thermal oxidation process isperformed on the top surface of the substrate 100 and the surfaces ofthe first through third semiconductor patterns 127, 128, and 129 so asto form an interface pattern 220, a gate insulating layer may be formedon a surface of the interface pattern 220, on the inner sidewalls of theinner spacer 180, on the inner sidewalls of the gate spacer 160, and ona top surface of the insulating layer 200. A gate electrode layer may beformed on the gate insulating layer to fill remaining portions of thesecond through fifth openings 210, 212, 214, and 216.

The interface pattern 220 may be formed of, for example, an oxide suchas silicon oxide, the gate insulating layer may be formed, for example,of metal oxide having a high-k dielectric constant, such as hafniumoxide (HfO₂), tantalum oxide (Ta₂O₅) or zirconium oxide (ZrO₂) using aCVD process or an ALD process. The gate electrode layer may be formed,for example, of a metal such as aluminum (Al), copper (Cu) or tantalum(Ta), and/or a nitride thereof. The gate electrode layer may be formedusing, for example, a CVD process, an ALD process, or a physical vapordeposition (PVD) process. After forming the gate electrode layer, anannealing process such as a rapid thermal annealing (RTA) process, aspike RTA process, a flash RTA process, or a laser annealing process maybe conducted.

In some embodiments, the interface pattern 220 may be formed by a CVDprocess or an ALD process instead of the thermal oxidation process. Inthis case, the interface pattern 220 may be formed on the innersidewalls of the inner spacer 180 and the gate spacer 160, on the topsurface of the substrate 100, and on the surfaces of the first throughthird semiconductor patterns 127, 128 and 129.

In addition, a work function control layer may be formed before formingthe gate electrode layer on the gate insulating layer. The work functioncontrol layer may be formed, for example, of metal nitride or metalalloy such as titanium nitride (TiN), titanium aluminum (TiAl), titaniumaluminum nitride (TiAlN), tantalum nitride (TaN), or tantalum aluminumnitride (TaAlN).

The gate electrode layer and the gate insulating layer may be planarizedto expose the top surface of the insulating layer 200 and to therebyform a gate electrode 240 and a gate insulating pattern 230 are formed.

The interface pattern 220, the gate insulating pattern 230, and the gateelectrode 240 may constitute a gate structure 250. The gate structure250 may form an NMOS transistor or a PMOS transistor together with thesource/drain layers. In some embodiments, the gate structure 250 mayextend in the second direction and may be formed to include a pluralityof the gate structures spaced apart from each other in the firstdirection.

Referring to FIGS. 26 and 27, a capping layer 260 and an interlayerinsulating layer 270 may be sequentially formed on the insulating layer200, the gate structure 250, and the gate spacer 160. A contact hole 280may be formed to penetrate the insulating layer 200, the capping layer260, and the interlayer insulating layer 270 and to expose a top surfaceof the fourth semiconductor layer 190. In some embodiments, afterforming the contact hole 280, a portion the insulating layer 200 mayremain on the fourth semiconductor layer 190 that covers a portion ofthe gate spacer 160 and a portion of the fourth semiconductor layer 190.The capping layer 260 may be formed, for example, silicon oxide such astetra ethyl ortho silicate (TEOS).

Referring again to FIGS. 1 through 4, a first metal layer may be formedon the exposed top surface of the fourth semiconductor layer 190, asidewall of the contact hole, and a top surface of the interlayerinsulating layer 270. An annealing process may be conducted to form ametal silicide pattern 290. The first metal layer may be formed, forexample, of a metal such as titanium, cobalt or nickel.

A barrier layer may be formed on a top surface of the metal silicidepattern 290, the sidewall of the contact hole 280, and the top surfaceof the interlayer insulating layer 270. A second metal layer that fillsthe contact hole 280 may be formed on the barrier layer. The secondmetal layer and the barrier layer may be planarized to expose the topsurface of the interlayer insulating layer 270. Thus, a contact plug 320that fills the contact hole 280 may be formed on the metal silicidepattern 290. In some embodiments, the contact plug 320 may be formed tobe self-aligned with the gate spacer 160.

The barrier layer may be formed, for example, of metal nitride such astantalum nitride, titanium nitride or tungsten nitride. The second metallayer may be formed, for example, of a metal such as tungsten or copper.

The contact plug 320 may include a metal pattern 310 and a barrierpattern 300, that covers a bottom surface and a side surface of themetal pattern 310. An interconnection line and a via contact may beformed to be electrically connected to the contact plug 320.

FIG. 28 illustrates another embodiment of a semiconductor device, whichmay be similar to or the same as the semiconductor device in FIGS. 1through 4, except for shapes or features of the fourth semiconductorlayer and the semiconductor patterns. Referring to FIG. 28, the fourthsemiconductor layer 190 may have a width in the first direction whichgradually decreases in the downward direction. The fourth semiconductorlayer 190 may be doped with impurities and may be annealed. The impuritydoping profile may correspond to a sidewall profile of the fourthsemiconductor layer 190 and may be sloped relative to the top surface ofthe substrate 100. For example, the first through third end portions 127b, 128 b, and 129 b of the first through third semiconductor patterns127, 128, and 129, that are formed by the impurity doping process, maybe formed to have a substantially constant length in the firstdirection.

The channels in the first through third central portions 127 a, 128 a,and 129 a of the first through third semiconductor patterns 127, 128,and 129 may have lengths in the first direction (e.g., effective channellengths or effective gate lengths) which gradually increase in thedownward direction. The first through third semiconductor patterns 127,128, and 129 may respectively have first through third thicknesses T1,T2, and T3 in the third direction, that increase in the downwarddirection. Thus, the current flowing through each of the channels may besimilar or substantially equal.

FIGS. 29 and 30 illustrate various stages in another embodiment of amethod for fabricating a semiconductor device. This method may includethe same or similar processes as those in the method of FIGS. 5 through27 and FIGS. 1 through 4, except as noted below.

Referring to FIG. 29, the same or similar processes as those in FIGS. 5through 14 may be performed. However, when the second structure S2 isformed by etching the first structure S1 using the dummy gate structureDG and the gate spacer 160 as the etch mask, according tocharacteristics of the etching process, the sidewall of the secondstructure S2 may not be vertical to the top surface of the substrate100, but rather may be sloped relative to the top surface of thesubstrate 100. For example, the second structure S2 may have a width inthe first direction that gradually increases in the downward direction.

Referring to FIG. 30, the same or similar processes as those in FIGS. 15through 18 may be performed. Accordingly, the fourth semiconductor layer190 formed between the second structures S2 may have a width in thefirst direction which gradually decreases in the downward direction. Thefourth semiconductor layer 190 may be doped with impurities and may beannealed. The impurity doping profile may correspond to a sidewallprofile of the fourth semiconductor layer 190 and may be sloped relativeto the top surface of the substrate 100. For example, the first throughthird end portions 127 b, 128 b, and 129 b of the first through thirdsemiconductor patterns 127, 128, and 129, that are formed by theimpurity doping process, may be formed to have a substantially constantlength in the first direction.

The channels in the first through third central portions 127 a, 128 a,and 129 a of the first through third semiconductor patterns 127, 128,and 129 may have lengths in the first direction (e.g., effective channellengths or effective gate lengths) which gradually increase in thedownward direction. The first through third semiconductor patterns 127,128, and 129 may respectively have first through third thicknesses T1,T2, and T3 in the third direction which increase in the downwarddirection. Thus, the current flowing through each of the channels may besimilar or substantially equal.

Referring again to FIG. 28, the same or similar processes as those inFIGS. 19 through 27 and FIGS. 1 through 4 may be also performed.

FIG. 31 illustrates another embodiment of a semiconductor device, whichmay be the same as or similar to the semiconductor device in FIGS. 1through 4, except for shapes or features of the fourth semiconductorlayer and the semiconductor patterns.

Referring to FIG. 31, the fourth semiconductor layer 190 may have agreater width in the first direction at a middle portion than at anupper portion or at a lower portion. The width in the first direction atthe upper portion is greater than that at the lower portion. The fourthsemiconductor layer 190 may be doped with impurities and may beannealed. The impurity doping profile may correspond to a sidewallprofile of the fourth semiconductor layer 190. For example, the firstthrough third end portions 127 b, 128 b, and 129 b of the first throughthird semiconductor patterns 127, 128, and 129, that are formed by theimpurity doping process, may be formed to have a substantially constantlength in the first direction.

The channels in the first through third central portions 127 a, 128 aand 129 a of the first through third semiconductor patterns 127, 128,and 129 may have lengths in the first direction (e.g., effective channellengths or effective gate lengths), that vary depending on the levelpositions of the semiconductor patterns 127, 128, and 129. For example,the first central portion 127 a at a lowermost level position may havethe greatest length and the second central portion 128 a at anintermediate level position may have the smallest length.

The first through third semiconductor patterns 127, 128, and 129 mayrespectively have first through third thicknesses T1, T2, and T3 in thethird direction in a proportional relationship to the lengths of thefirst through third central portions 127 a, 128 a, and 129 a in thefirst direction. For example, the first thickness T1 of the firstsemiconductor pattern 127 at the lowermost level position may begreatest, and the second thickness T2 of the second semiconductorpattern 128 at the intermediate level position may be smallest. Thus,current flowing through each of the channels may be similar orsubstantially equal.

FIGS. 32 and 33 illustrate various stages of another embodiment of amethod for fabricating a semiconductor device. This method may includeprocesses which are the same as or similar to processes in FIGS. 5through 27 and FIGS. 1 through 4, except where noted below.

Referring to FIG. 32, the same or similar processes to those in FIGS. 5through 14 may be performed. However, when the second structure S2 isformed by etching the first structure S1 using the dummy gate structureDG and the gate spacer 160 as the etch mask, according tocharacteristics of the etching process, the sidewall of the secondstructure S2 may not be vertical to the top surface of the substrate100, but rather may be sloped relative to the top surface of thesubstrate 100.

In some embodiments, the second structure S2 may have a smaller width inthe first direction at a middle portion than at an upper portion or at alower portion. The width in the first direction at the lower portion maybe greater than the width at the upper portion in the first direction.

Referring to FIG. 33, the same or similar processes as those in FIGS. 15through 18 may be performed. Accordingly, the fourth semiconductor layer190 formed between the second structures S2 may have a greater width inthe first direction at a middle portion than at an upper portion or at alower portion. The width in the first direction at the upper portion isgreater than the width at the lower portion in the first direction. Thefourth semiconductor layer 190 may be doped with impurities and may beannealed. The impurity doping profile may be similar to a sidewallprofile of the fourth semiconductor layer 190. For example, the firstthrough third end portions 127 b, 128 b, and 129 b of the first throughthird semiconductor patterns 127, 128, and 129, that are formed by theimpurity doping process, may be formed to have a substantially constantlength in the first direction.

The channels in the first through third central portions 127 a, 128 a,and 129 a of the first through third semiconductor patterns 127, 128,and 129 may have lengths in the first direction (e.g., effective channellengths or effective gate lengths), that vary depending on the levelpositions of the semiconductor patterns 127, 128, and 129. For example,the first central portion 127 a at a lowermost level position may havethe greatest length, and the second central portion 128 a at anintermediate level position may have the smallest length.

The first through third semiconductor patterns 127, 128, and 129 mayrespectively have first through third thicknesses T1, T2, and T3 in thethird direction in a proportional relationship to the lengths of thefirst through third central portions 127 a, 128 a, and 129 a in thefirst direction. For example, the first thickness T1 of the firstsemiconductor pattern 127 at the lowermost level position may begreatest, and the second thickness T2 of the second semiconductorpattern 128 at the intermediate level position may be smallest. Thus,current flowing through each of the channels may be similar orsubstantially equal.

Referring again to FIG. 31, the same or similar processes as those inFIGS. 19 through 27 and FIGS. 1 through 4 may be additional performed.

FIG. 34 illustrates another embodiment of a semiconductor device, whichmay be similar to or the same as the semiconductor device in FIGS. 1through 4, except for shapes or features of the fourth semiconductorlayer and the semiconductor patterns. Referring to FIG. 34, the fourthsemiconductor layer 190 may have a width in the first direction whichgradually increases in the downward direction. The fourth semiconductorlayer 190 may be doped with impurities and may be annealed. The impuritydoping profile may correspond to a sidewall profile of the fourthsemiconductor layer 190. For example, the first through third endportions 127 b, 128 b, and 129 b of the first through thirdsemiconductor patterns 127, 128, and 129, that are formed by theimpurity doping process, may have a substantially constant length in thefirst direction.

The channels in the first through third central portions 127 a, 128 a,and 129 a of the first through third semiconductor patterns 127, 128,and 129 may have lengths in the first direction (e.g., effective channellengths or effective gate lengths) which gradually decreases in thedownward direction. The first through third semiconductor patterns 127,128, and 129 may respectively have first through third thicknesses T1,T2, and T3 in the third direction which gradually decreases in thedownward direction, in proportion to the lengths of the first throughthird central portions 127 a, 128 a, and 129 a in the first direction.Thus, current flowing through each of the channels may be similar orsubstantially equal.

FIG. 35 illustrates another embodiment of a semiconductor device, whichmay be similar to or the same as the semiconductor device as in FIGS. 1through 4, except for shapes or features of the fourth semiconductorlayer and the semiconductor patterns. Referring to FIG. 35, thesemiconductor device may include a fourth semiconductor pattern 120 inaddition to the first through third semiconductor patterns 127, 128, and129. In some embodiments, the fourth semiconductor pattern 120 may beformed between the substrate 100 and the gate structure 250. Forexample, the fourth semiconductor pattern 120 may further be formedbetween a bottom surface of the gate structure 250 and the top surfaceof the substrate 100, such that the gate structure 250 is not in directcontact with the top surface of the substrate 100.

The fourth semiconductor pattern 120 may include a fourth centralportion 120 a serving as a channel of the transistor and fourth endportions 120 b serving as the source/drain layer (e.g., the extensionportions of the source/drain layer), similar to the first through thirdsemiconductor patterns 127, 128, and 129.

The fourth end portions 120 b may have a length in the first directionless than the lengths of the first through third semiconductor patterns127, 128, and 129 in the first direction. The central portion 120 a mayhave a length in the first direction (e.g., an effective channel lengthor effective gate length Le4) greater than lengths (e.g., the effectivechannel lengths or effective gate lengths Le1, Le2 and Le3) of the firstthrough third central portion 127 a, 128 a, and 129 a in the firstdirection.

In some embodiments, the semiconductor pattern 120 may have a fourththickness T4 that is greater than the first through third thicknessesT1, T2, and T3 of the first through third semiconductor patterns 127,128, and 129. Thus, current flowing through each of the channels may besimilar or substantially equal.

A semiconductor device including a plurality of channels verticallystacked as described in accordance with the aforementioned embodimentsmay be applied to various devices including memory devices andelectronic systems. For example, the semiconductor device may be appliedto a logic device such as a central processing unit (CPU), amicroprocessor unit (MPU) or an application processor (AP). Thesemiconductor device may be applied to a volatile memory device such asa dynamic random access memory (DRAM) or a static random access memory(SRAM), or a non-volatile memory device such as a flash memory, a phasechange random access memory (PRAM), a magnetic random access memory(MRAM), or a resistance random access memory (RRAM).

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. Theembodiments (or portions thereof) may be combined to form additionalembodiments. In some instances, as would be apparent to one of skill inthe art as of the filing of the present application, features,characteristics, and/or elements described in connection with aparticular embodiment may be used singly or in combination withfeatures, characteristics, and/or elements described in connection withother embodiments unless otherwise specifically indicated. Accordingly,it will be understood by those of skill in the art that various changesin form and details may be made without departing from the spirit andscope of the embodiments disclosed in the specification.

1. A semiconductor device, comprising: a plurality of channelssequentially stacked on a substrate, the plurality of channels spacedapart from each other in a first direction perpendicular to a topsurface of the substrate; source/drain layers at opposite sides of theplurality of channels in a second direction parallel to the top surfaceof the substrate, the source/drain layers connected to the plurality ofchannels; and a gate structure enclosing the plurality of channels,wherein the plurality of channels have different lengths in the seconddirection and different thicknesses in the first direction.
 2. Thesemiconductor device as claimed in claim 1, wherein the thicknesses ofthe plurality of channels in the first direction are in a proportionalrelationship to the lengths of the plurality of channels in the seconddirection.
 3. The semiconductor device as claimed in claim 2, wherein:the lengths of the plurality of channels in the second directionincrease in a predetermined direction, and the thicknesses of theplurality of channels in the first direction increase in thepredetermined direction.
 4. The semiconductor device as claimed in claim2, wherein: a length of each of an uppermost channel and a lowermostchannel of the plurality of channels in the second direction is greaterthan a length of an intermediate channel of the plurality of channels inthe second direction, and a thickness of each of the uppermost channeland the lowermost channel of the plurality of channels in the firstdirection is greater than a thickness of the intermediate channel of theplurality of channels in the first direction.
 5. The semiconductordevice as claimed in claim 1, wherein each of the source/drain layersincludes: an epitaxial layer on the substrate; and extension portionsextending from the epitaxial layer in the second direction andrespectively connected to the plurality of channels.
 6. Thesemiconductor device as claimed in claim 5, wherein the extensionportions include: substantially a same material as the plurality ofchannels, and a same impurity as the epitaxial layer.
 7. Thesemiconductor device as claimed in claim 5, wherein the epitaxial layerand the extension portions include different materials and a sameimpurity.
 8. The semiconductor device as claimed in claim 5, wherein:the epitaxial layer has a substantially vertical sidewall along thefirst direction, and the extension portions have lengths in the seconddirection that progressively decrease in a downward direction.
 9. Thesemiconductor device as claimed in claim 5, wherein: the epitaxial layerhas a width in the second direction that progressively decreases in apredetermined direction, and the extension portions have a constantlength in the second direction in the predetermined direction.
 10. Thesemiconductor device as claimed in claim 5, wherein: the epitaxial layerhas a greater width in the second direction at a middle portion than atan upper portion or at a lower portion, and extension portions have asubstantially constant length in the second direction.
 11. Thesemiconductor device as claimed in claim 5, further comprising: an innerspacer between the gate structure and the epitaxial layer.
 12. Thesemiconductor device as claimed in claim 11, wherein the gate structureincludes: a gate insulating pattern enclosing each of the plurality ofchannels; and a gate electrode at least partially covered by the gateinsulating patterns, the gate electrode extending in a third directionparallel to the top surface of the substrate and perpendicular to thesecond direction.
 13. A semiconductor device, comprising: a pair offirst semiconductor patterns on a substrate, the pair of firstsemiconductor patterns spaced apart from each other in a first directionparallel to a top surface of the substrate; second semiconductorpatterns between the pair of first semiconductor patterns and connectedto the pair of first semiconductor patterns, the second semiconductorpatterns spaced apart from each other in a second directionperpendicular to the top surface of the substrate; and a gate structurebetween the pair of first semiconductor patterns and covering the secondsemiconductor patterns, wherein each of the second semiconductorpatterns includes a central portion between end portions in the firstdirection, the end portions of the second semiconductor patternsincluding a same impurity as the pair of first semiconductor patterns,and the central portions of the second semiconductor patterns havingdifferent lengths and different thicknesses from each other.
 14. Thesemiconductor device as claimed in claim 13, wherein the thicknesses ofthe central portions of the second semiconductor patterns are in aproportional relationship to the lengths of the central portions of thesemiconductor patterns.
 15. The semiconductor device as claimed in claim14, wherein the thicknesses and the lengths of the central portions ofthe second semiconductor patterns increase in a predetermined direction.16. (canceled)
 17. The semiconductor device as claimed in claim 13,wherein: the pair of first semiconductor patterns have substantiallyvertical sidewalls in the second direction, and the lengths of the endportions of the second semiconductor patterns decrease in apredetermined direction.
 18. The semiconductor device as claimed inclaim 13, wherein: the pair of first semiconductor patterns have a widthdecreasing in a predetermined direction, and the lengths of the endportions of the second semiconductor patterns are substantially constantin the predetermined direction.
 19. The semiconductor device as claimedin claim 18, wherein the gate structure includes a gate insulatingpattern partially enclosing the second semiconductor patterns, and agate electrode at least partially covered by the gate insulatingpatterns. 20-23. (canceled)
 24. A semiconductor device, comprising: aplurality of patterns stacked on a substrate; and a plurality of gateelectrodes on respective ones of the patterns, wherein the patternsinclude channels and wherein lengths of the channels or gate electrodesprogressively change to offset a progressive change in thicknesses ofthe channels or gate electrodes in a predetermined direction.
 25. Thesemiconductor device as claimed in claim 24, further comprising: aplurality of source/drain layers adjacent respective sides of thepatterns, wherein at least one of the channels or the source/drainlayers have a non-uniform doping profile. 26-27. (canceled)